IRFZ48VPBF
MOSFET N-CH 60V 72A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ48VPBF is a 60V N-Channel Power MOSFET. This device features a continuous drain current of 72A (Tc) and a maximum power dissipation of 150W (Tc). The Rds(On) is a maximum of 12mOhm at 43A and 10V gate drive. Input capacitance (Ciss) is specified at 1985pF (max) at 25V, with a gate charge (Qg) of 110nC (max) at 10V. The IRFZ48VPBF utilizes a TO-220AB package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, automotive systems, and high-current switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1985 pF @ 25 V |