IRFZ48NSTRR
MOSFET N-CH 55V 64A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFZ48NSTRR, offers robust performance for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 64A at 25°C (Tc). With a low on-resistance (Rds On) of 14mOhm at 32A and 10V Vgs, it minimizes conduction losses. The MOSFET's high thermal performance is indicated by its power dissipation capabilities of 3.8W (Ta) and 130W (Tc). Key parameters include a Gate Charge (Qg) of 81 nC at 10V and Input Capacitance (Ciss) of 1970 pF at 25V. Designed for surface mounting, it is supplied in a TO-263-3, D2PAK package on tape and reel (TR). This component is suitable for use in power supply and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 25 V |
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