IRFZ48NSPBF
MOSFET N-CH 55V 64A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ48NSPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 64A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 14mOhm maximum at 32A and 10V Vgs, ensuring minimal conduction losses. With a gate charge (Qg) of 81nC maximum at 10V Vgs and input capacitance (Ciss) of 1970pF maximum at 25V Vds, it is optimized for fast switching frequencies. The IRFZ48NSPBF is packaged in a TO-263-3, D2PAK surface mount configuration, supporting a maximum continuous power dissipation of 130W at 25°C (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly utilized in automotive systems, industrial power supplies, and high-power DC-DC converters.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 25 V |
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