IRFZ48NLPBF
MOSFET N-CH 55V 64A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ48NLPBF is a high-performance N-Channel power Metal Oxide Semiconductor Field-Effect Transistor. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 64A at 25°C (Tc). Achieving a low on-resistance of 14mOhm maximum at 32A and 10V Vgs, the IRFZ48NLPBF offers efficient power handling. It is specified with a Gate Charge (Qg) of 81 nC maximum at 10V and an Input Capacitance (Ciss) of 1970 pF maximum at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package suitable for through-hole mounting. Power dissipation is rated at 130W (Tc) and 3.8W (Ta). This MOSFET is commonly utilized in industrial automation, power supply, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 25 V |
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