IRFZ48NL
MOSFET N-CH 55V 64A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ48NL is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 64A at 25°C (Tc). With a low on-resistance (Rds On) of 14mOhm maximum at 32A and 10V gate drive, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 81 nC maximum at 10V and an input capacitance (Ciss) of 1970 pF maximum at 25V. Power dissipation is rated at 3.8W (Ta) and 130W (Tc). The IRFZ48NL is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262) through-hole package, suitable for through-hole mounting. It operates reliably across an extended temperature range from -55°C to 175°C (TJ). This component finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1970 pF @ 25 V |
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