IRFZ46ZPBF
MOSFET N-CH 55V 51A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ46ZPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 55V drain-to-source breakdown voltage and a continuous drain current capability of 51A at 25°C (Tc), with a maximum power dissipation of 82W (Tc). The low on-resistance of 13.6mOhm at 31A and 10V gate drive voltage, combined with a gate charge of 46 nC at 10V, ensures excellent conduction and switching losses.
The TO-220AB package with through-hole mounting facilitates integration into power supply designs. With a maximum gate-source voltage of ±20V and an operating junction temperature range of -55°C to 175°C, the IRFZ46ZPBF is suitable for demanding industrial, automotive, and consumer electronics applications. Its Metal Oxide technology provides robust performance for power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
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