IRFZ46Z
MOSFET N-CH 55V 51A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ46Z is an N-Channel power MOSFET designed for demanding applications. This component features a 55V drain-source breakdown voltage and a continuous drain current rating of 51A at 25°C (Tc). With a maximum on-resistance of 13.6mOhm at 31A and 10V Vgs, it offers low conduction losses. The device provides a gate charge of 46 nC at 10V and an input capacitance of 1460 pF at 25V. It is packaged in a TO-220AB through-hole configuration. Rated for a maximum power dissipation of 82W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the IRFZ46Z is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |