IRFZ46NSTRRPBF
MOSFET N-CH 55V 53A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ46NSTRRPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 53A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 16.5mOhm maximum at 28A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 72nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 1696pF maximum at 25V Vds. With a maximum power dissipation of 107W (Tc), this MOSFET is suitable for demanding power switching and control circuits. The TO-263-3, D2PAK package facilitates surface mounting and is supplied on tape and reel. It is engineered for use in industrial, automotive, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 25 V |