IRFZ46NSPBF
MOSFET N-CH 55V 53A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ46NSPBF is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) capability of 53A at 25°C (Tc). The Rds On is specified at a maximum of 16.5mOhm at 28A and 10V Vgs. With a Gate Charge (Qg) of 72 nC at 10V and an input capacitance (Ciss) of 1696 pF at 25V, this MOSFET offers efficient switching characteristics. Maximum power dissipation stands at 3.8W (Ta) and 107W (Tc). The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. It finds application in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 25 V |
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