IRFZ46NS
MOSFET N-CH 55V 53A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ46NS is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 53A at 25°C (Tc). With a low On-Resistance (Rds On) of 16.5mOhm maximum at 28A and 10V, it offers efficient power handling. The MOSFET is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 72 nC maximum at 10V and an Input Capacitance (Ciss) of 1696 pF maximum at 25V. Maximum power dissipation is rated at 107W (Tc) and 3.8W (Ta). Operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 25 V |
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