IRFZ46NLPBF
MOSFET N-CH 55V 53A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ46NLPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component offers a continuous drain current of 53A at 25°C (Tc) and a drain-source voltage (Vdss) of 55V. The Rds On is specified at a maximum of 16.5mOhm at 28A and 10V gate drive. Key parameters include a gate charge (Qg) of 72 nC (Max) at 10V and input capacitance (Ciss) of 1696 pF (Max) at 25V. The device features a low thermal resistance, enabling a maximum power dissipation of 107W (Tc). It is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Typical applications include power supplies, motor control, and automotive electronics. Operating temperature ranges from -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 25 V |
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