IRFZ46NL
MOSFET N-CH 55V 53A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, IRFZ46NL. This through-hole TO-262 package device offers a 55 V drain-source voltage and a continuous drain current of 53 A at 25°C (Tc). Key electrical characteristics include a maximum Rds(on) of 16.5 mOhm at 28 A and 10 V, with a gate charge of 72 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 1696 pF at 25 V. Power dissipation is rated at 107 W (Tc) and 3.8 W (Ta). Operating junction temperature range is -55°C to 175°C. This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 25 V |