IRFZ44ZSTRRPBF
MOSFET N-CH 55V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44ZSTRRPBF is an N-Channel Power MOSFET designed for high-efficiency applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 51A at 25°C (Tc). The low on-resistance, specified as a maximum of 13.9mOhm at 31A and 10V gate drive, minimizes conduction losses. With a maximum power dissipation of 80W (Tc), it is suitable for demanding thermal environments. The MOSFET is packaged in a D2PAK (TO-263-3) surface-mount format, supplied on tape and reel. Key parameters include a gate charge (Qg) of 43nC at 10V and input capacitance (Ciss) of 1420pF at 25V. This component finds application in power supply units, motor control, and automotive systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
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