IRFZ44ZS
MOSFET N-CH 55V 51A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRFZ44ZS is an N-Channel power MOSFET designed for demanding applications requiring high current handling and low on-resistance. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 51A at 25°C (Tc), with a maximum power dissipation of 80W (Tc). The Rds On is rated at a maximum of 13.9mOhm at 31A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 43nC at 10V and an Input Capacitance (Ciss) of 1420pF at 25V. The device utilizes MOSFET technology and is housed in a TO-263-3, D2PAK surface-mount package. It is suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This device finds application in industries such as automotive, industrial power control, and power supply units.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
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