IRFZ44ZLPBF
MOSFET N-CH 55V 51A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFZ44ZLPBF, offers a 55V drain-source voltage and a continuous drain current of 51A at 25°C (Tc). This TO-262 package device features a low on-resistance of 13.9mOhm maximum at 31A and 10V Vgs. The MOSFET boasts a maximum power dissipation of 80W (Tc) and a gate charge of 43nC at 10V. Operating across a temperature range of -55°C to 175°C (TJ), the IRFZ44ZLPBF is suitable for applications in industrial automation, power supply design, and automotive systems requiring robust switching performance. Key electrical characteristics include a 1420pF maximum input capacitance (Ciss) at 25V and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 25 V |
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