IRFZ44VZSTRRPBF
MOSFET N-CH 60V 57A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VZSTRRPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 57A at 25°C (Tc). The device offers a low on-resistance of 12mOhm maximum at 34A and 10V gate drive, contributing to reduced conduction losses. With a maximum power dissipation of 92W (Tc), it is suitable for demanding power conversion tasks. The IRFZ44VZSTRRPBF is packaged in a D2PAK (TO-263-3, D2PAK) surface-mount case, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 65 nC maximum at 10V and input capacitance (Ciss) of 1690 pF maximum at 25V. This MOSFET is utilized in various industries including automotive, industrial power supplies, and motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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