IRFZ44VZSPBF
MOSFET N-CH 60V 57A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VZSPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 57A at 25°C (Tc). The low on-resistance of 12mOhm at 34A and 10V gate drive voltage contributes to minimized conduction losses. With a maximum power dissipation of 92W (Tc) and a wide operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding environments. The device utilizes advanced HEXFET® technology for improved performance. Key electrical characteristics include a gate charge (Qg) of 65 nC at 10V and input capacitance (Ciss) of 1690 pF at 25V. The IRFZ44VZSPBF is supplied in a TO-263-3, D2PAK package for surface mounting. This MOSFET is commonly used in automotive, industrial, and power supply applications requiring robust power handling.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |