IRFZ44VZS
MOSFET N-CH 60V 57A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VZS is an N-channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 57A at 25°C (Tc), with a maximum power dissipation of 92W (Tc). The low on-resistance of 12mOhm (max) at 34A and 10V gate drive voltage, coupled with a Gate Charge (Qg) of 65nC (max) at 10V, ensures efficient switching performance. The device utilizes advanced HEXFET technology for high current density and low on-resistance. With an input capacitance (Ciss) of 1690pF (max) at 25V and a threshold voltage (Vgs(th)) of 4V (max) at 250µA, it is suitable for various switching and linear applications. The TO-263-3, D2PAK package facilitates surface mounting and offers excellent thermal performance for use in industrial and automotive power management systems. This component operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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