IRFZ44VZL
MOSFET N-CH 60V 57A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VZL is a N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 57A at 25°C (Tc), with a maximum power dissipation of 92W (Tc). The low on-resistance of 12mOhm at 34A and 10V (Vgs) facilitates efficient power transfer. Key parameters include a gate charge (Qg) of 65nC at 10V and input capacitance (Ciss) of 1690pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Applications span industrial power control, automotive systems, and high-current switching circuits.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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