IRFZ44VZ
MOSFET N-CH 60V 57A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFZ44VZ is a 60V N-Channel power MOSFET designed for high-current applications. This through-hole component, housed in a TO-220AB package, offers a continuous drain current capability of 57A at 25°C (Tc) and a maximum power dissipation of 92W (Tc). Key electrical characteristics include a low on-resistance of 12mOhm at 34A and 10V (Vgs), an input capacitance (Ciss) of 1690 pF (max) at 25V (Vds), and a gate charge (Qg) of 65 nC (max) at 10V (Vgs). The device features a threshold voltage (Vgs(th)) of 4V (max) at 250µA and a maximum gate-source voltage (Vgs) of ±20V. It operates reliably across a temperature range of -55°C to 175°C (TJ). This component is utilized in various industrial sectors including automotive, power supplies, and motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |