IRFZ44VSTRR
MOSFET N-CH 60V 55A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VSTRR is an N-Channel Power MOSFET engineered for demanding applications. This device features a 60V drain-source voltage rating and a continuous drain current capability of 55A at 25°C (Tc). With a maximum power dissipation of 115W (Tc), it is suitable for high-power switching circuits. The low on-resistance of 16.5mOhm at 31A and 10V gate drive voltage minimizes conduction losses. Key parameters include a gate charge of 67nC at 10V and input capacitance of 1812pF at 25V. The TO-263-3, D2PAK (2 Leads + Tab) package offers efficient surface mounting. This component operates within a temperature range of -55°C to 175°C (TJ). Its robust design makes it a reliable choice for power management in industrial and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1812 pF @ 25 V |
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