IRFZ44VSTRL
MOSFET N-CH 60V 55A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VSTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 55 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 16.5 mOhm maximum at 31 A and 10 V Vgs, ensuring minimal conduction losses. With a maximum power dissipation of 115 W (Tc) and a junction-to-case thermal resistance optimized for its D2PAK package, it is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 67 nC maximum at 10 V and input capacitance (Ciss) of 1812 pF maximum at 25 V. The operating temperature range is -55°C to 175°C (TJ). This surface-mount device, supplied in a TO-263-3, D2PAK package on tape and reel, finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1812 pF @ 25 V |
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