IRFZ44VS
MOSFET N-CH 60V 55A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFZ44VS is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 55A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 16.5mOhm maximum at 31A and 10V gate drive. With a maximum power dissipation of 115W (Tc), it is suitable for high-power switching and linear applications. Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 1812 pF at 25V. The IRFZ44VS is constructed with advanced MOSFET technology and packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB for efficient surface mounting. This component finds application in automotive, industrial power control, and power supply designs. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1812 pF @ 25 V |