IRFZ44VPBF
MOSFET N-CH 60V 55A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44VPBF is an N-Channel Power MOSFET designed for high-current switching applications. This device features a 60V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 55A at 25°C (Tc). The Rds(On) is specified at a maximum of 16.5mOhm at 31A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 115W (Tc), the IRFZ44VPBF is suitable for applications requiring efficient power management. Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 1812 pF at 25V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-220AB package, suitable for through-hole mounting. This component is commonly utilized in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1812 pF @ 25 V |
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