IRFZ44NSTRR
MOSFET N-CH 55V 49A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44NSTRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 49A at 25°C (Tc). The low on-resistance of 17.5mOhm (max) at 25A and 10V gate-source voltage minimizes conduction losses. Key parameters include a gate charge of 63 nC (max) at 10V and input capacitance of 1470 pF (max) at 25V. With a maximum power dissipation of 94W (Tc), it is suitable for demanding thermal environments. The TO-263-3, D2PAK package facilitates surface mounting and is supplied on tape and reel. This MOSFET is utilized across various industries requiring robust power management solutions, including automotive and industrial control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 25 V |
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