IRFZ44NLPBF
MOSFET N-CH 55V 49A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44NLPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a maximum drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 49 A at 25°C (Tc). With a low on-resistance (Rds On) of 17.5 mOhm at 25 A and 10 V, it minimizes conduction losses. The device offers a gate charge (Qg) of 63 nC at 10 V and an input capacitance (Ciss) of 1470 pF at 25 V. Its maximum power dissipation is rated at 94 W (Tc) and 3.8 W (Ta). The IRFZ44NLPBF is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting and operating within a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 25 V |
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