IRFZ44ESTRRPBF
MOSFET N-CH 60V 48A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44ESTRRPBF is an N-channel power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C (Tc). With a maximum power dissipation of 110W (Tc), it is suitable for high-power switching and amplification tasks. The Rds(On) is specified at a maximum of 23mOhm at 29A and 10V gate drive. Key parameters include a gate charge (Qg) of 60nC (Max) at 10V and an input capacitance (Ciss) of 1360pF (Max) at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET utilizes surface-mount technology in a TO-263-3, D2PAK package. It finds application in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |