IRFZ44ESTRL
MOSFET N-CH 60V 48A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44ESTRL is an N-Channel Power MOSFET designed for demanding applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 48 A at 25°C (Tc). With a low on-resistance (Rds On) of 23 mOhm maximum at 29 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 110 W (Tc) and a gate charge (Qg) of 60 nC maximum at 10 V. It is housed in a surface-mount D2PAK package (TO-263-3, D2PAK) and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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