IRFZ44EPBF
MOSFET N-CH 60V 48A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFZ44EPBF is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 60 V drain-source voltage and a continuous drain current capability of 48 A at 25°C (Tc). With a maximum power dissipation of 110 W (Tc) and a low on-resistance of 23 mOhm at 29 A and 10 V, it ensures efficient power handling. The device's gate charge is 60 nC at 10 V, and its input capacitance (Ciss) is 1360 pF at 25 V. Operating within a temperature range of -55°C to 175°C (TJ), the IRFZ44EPBF is suitable for power management, motor control, and industrial automation. The TO-220AB package provides robust thermal performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |