IRFZ44EL
MOSFET N-CH 60V 48A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44EL is a 60V N-Channel Power MOSFET designed for demanding applications. This through-hole component, packaged in a TO-262-3 Long Leads (I2PAK, TO-262AA) configuration, offers a continuous drain current of 48A (Tc) and a maximum power dissipation of 110W (Tc). Key electrical characteristics include a low on-resistance of 23mOhm at 29A and 10V Vgs, and a gate charge of 60nC at 10V. The input capacitance (Ciss) is rated at a maximum of 1360pF at 25V, with a Vgs(th) of 4V at 250µA. Operating across a temperature range of -55°C to 175°C, the IRFZ44EL is suitable for use in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |