IRFZ44E
MOSFET N-CH 60V 48A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ44E is an N-Channel power MOSFET designed for high-efficiency switching applications. This through-hole component, housed in a TO-220AB package, features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 48A at 25°C, with a maximum power dissipation of 110W. The IRFZ44E offers a low on-resistance (Rds On) of 23mOhm at 29A and 10V gate drive, along with a typical gate charge (Qg) of 60nC. Its operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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