IRFZ34NSTRRPBF
MOSFET N-CH 55V 29A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ34NSTRRPBF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 29 A at 25°C (Tc). The Rds(on) is specified at a maximum of 40 mOhm at 16 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 34 nC and Input Capacitance (Ciss) of 700 pF at 25 V. With a maximum power dissipation of 68 W (Tc), this MOSFET is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). The IRFZ34NSTRRPBF finds application in power supply units, motor control, and automotive systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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