IRFZ34NL
MOSFET N-CH 55V 29A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ34NL is a 55V N-Channel power MOSFET. This component is designed for high-efficiency switching applications and features a continuous drain current (Id) of 29A at 25°C (Tc). The low on-resistance (Rds On) of 40mOhm at 16A and 10V gate-source voltage minimizes conduction losses. With a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 700 pF at 25V, it offers optimized switching characteristics. The device dissipates up to 68W (Tc) and is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262) through-hole package, suitable for demanding thermal environments. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly found in industrial power supplies, automotive applications, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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