IRFZ34EPBF
MOSFET N-CH 60V 28A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ34EPBF is a 60V N-Channel Power MOSFET in a TO-220AB package. This device features a continuous drain current of 28A at 25°C (Tc) and a maximum power dissipation of 68W (Tc). The Rds(on) is specified at 42mOhm maximum at 17A and 10V Vgs. Key parameters include Vgs(th) of 4V max at 250µA, gate charge (Qg) of 30 nC max at 10V, and input capacitance (Ciss) of 680 pF max at 25V. Operating temperature range is -55°C to 175°C (TJ) with a maximum Vgs of ±20V. This component is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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