IRFZ34E
MOSFET N-CH 60V 28A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ34E is a 60V N-Channel Power MOSFET. This device features a continuous drain current of 28A at 25°C and a maximum power dissipation of 68W (Tc). With a low Rds(on) of 42mOhm at 17A and 10V, it offers efficient switching. The IRFZ34E has an input capacitance (Ciss) of 680pF at 25V and a gate charge (Qg) of 30nC at 10V. Designed for through-hole mounting in a TO-220AB package, it operates across a temperature range of -55°C to 175°C (TJ). Applications include power supply circuits, motor control, and general-purpose power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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