IRFZ24NSTRRPBF
MOSFET N-CH 55V 17A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ24NSTRRPBF is a N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain current (Id) of 17 A at 25°C (Tc). The low on-resistance of 70 mOhm at 10A and 10V gate drive ensures efficient power handling. With a gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 370 pF at 25 V, it is suitable for high-frequency switching. The TO-263-3, D2PAK package facilitates surface mounting, and the device operates across a wide temperature range from -55°C to 175°C (TJ). Maximum power dissipation is 3.8 W (Ta) and 45 W (Tc). This MOSFET is commonly utilized in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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