IRFZ24NLPBF
MOSFET N-CH 55V 17A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFZ24NLPBF is an N-Channel Power MOSFET designed for robust performance. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 17A at 25°C (Tc). The ON-resistance (Rds On) is specified at a maximum of 70mOhm at 10A and 10V gate-source voltage. With a gate charge (Qg) of 20 nC maximum at 10V, it offers efficient switching characteristics. The device supports a gate-source voltage (Vgs) range of ±20V and has a threshold voltage (Vgs(th)) of 4V maximum at 250µA. Power dissipation capabilities are 3.8W (Ta) and 45W (Tc). The IRFZ24NLPBF is housed in a TO-262 package, suitable for through-hole mounting. This MOSFET finds application in various industrial sectors, including power supplies and motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
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