IRFU9N20D
MOSFET N-CH 200V 9.4A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU9N20D is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 9.4 A at 25°C. The IRFU9N20D offers a low on-resistance (Rds On) of 380 mOhm maximum at 5.6 A and 10 V gate drive, with a gate charge (Qg) of 27 nC maximum at 10 V. Its input capacitance (Ciss) is 560 pF maximum at 25 V. The device is housed in an IPAK (TO-251AA) through-hole package, allowing for efficient heat dissipation with a maximum power dissipation of 86 W at 25°C. Operating temperature range is -55°C to 175°C. This MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 560 pF @ 25 V |
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