IRFU9120NPBF
MOSFET P-CH 100V 6.6A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFU9120NPBF is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.6A at 25°C (Tc). With a maximum power dissipation of 40W (Tc), it is suitable for power management and switching tasks. The Rds On (Max) is specified at 480mOhm at 3.9A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 27nC @ 10V and input capacitance (Ciss) of 350pF @ 25V. The device utilizes a P-Channel MOSFET technology and is housed in an IPAK (TO-251AA) package, facilitating through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component finds application in industries such as automotive, industrial automation, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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