IRFU7546PBF
MOSFET N-CH 60V 56A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFU7546PBF is an N-Channel StrongIRFET™ MOSFET designed for high-power applications. This through-hole component features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 56A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 7.9mOhm at 43A and 10V gate-to-source voltage (Vgs). With a maximum power dissipation of 99W (Tc), it is suitable for demanding thermal conditions. The IPAK (TO-251AA) package offers robust thermal performance. Key parameters include a gate charge (Qg) of 87nC at 10V and input capacitance (Ciss) of 3020pF at 25V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial automation, power supply, and motor control applications.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 99W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 25 V |
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