IRFU7540PBF
MOSFET N-CH 60V 90A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFU7540PBF, a N-Channel Power MOSFET from the StrongIRFET™ series. This component features a 60V drain-source voltage and a continuous drain current capability of 90A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance is rated at 4.8mOhm maximum at 66A and 10V gate-source voltage. Designed for efficient power handling, it utilizes a through-hole mounting type within an IPAK (TO-251AA) package, characterized by short leads. Key parameters include a gate charge of 130 nC (Max) at 10V and an input capacitance of 4360 pF (Max) at 25V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in power management and industrial control systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4360 pF @ 25 V |
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