IRFU7440PBF
MOSFET N-CH 40V 90A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU7440PBF is an N-Channel power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C. With a low on-resistance (Rds On) of 2.4mOhm at 90A and 10V Vgs, it facilitates efficient power transfer. The device has a maximum power dissipation of 140W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ).
Key electrical parameters include a gate charge (Qg) of 134 nC at 10V and input capacitance (Ciss) of 4610 pF at 25V. The IRFU7440PBF utilizes advanced MOSFET technology and is housed in an IPAK (TO-251AA) through-hole package with short leads, suitable for demanding applications in automotive, industrial, and power management sectors. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is a maximum of 3.9V at 100µA.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4610 pF @ 25 V |
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