IRFU6215PBF
MOSFET P-CH 150V 13A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFU6215PBF, is a high-performance power device designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 13A at 25°C, this component is optimized for power management and switching tasks. The device exhibits a maximum On-Resistance (Rds On) of 295mOhm at 6.6A and 10V, with a Gate Charge (Qg) of 66 nC at 10V. Its robust construction includes a Power Dissipation rating of 110W (Tc) and an operating temperature range of -55°C to 175°C (TJ). Packaged in an IPAK (TO-251AA) through-hole configuration, the IRFU6215PBF is suitable for use in industrial, automotive, and power supply designs.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 295mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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