IRFU5505PBF
MOSFET P-CH 55V 18A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel 55V 18A MOSFET, part number IRFU5505PBF, is available in an IPAK (TO-251AA) through-hole package. This device features a continuous drain current of 18A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 55V. The Rds On is specified at a maximum of 110mOhm for 9.6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 32 nC at 10V and input capacitance (Ciss) of 650 pF at 25V. The maximum power dissipation is 57W (Tc) with an operating temperature range of -55°C to 150°C (TJ). This component finds application in power management solutions across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 9.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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