IRFU5410
MOSFET P-CH 100V 13A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRFU5410. This through-hole component features a 100 V drain-source breakdown voltage and a continuous drain current of 13 A at 25°C (Tc). The IRFU5410 offers a maximum on-resistance of 205 mOhm at 7.8 A and 10 V gate-source voltage. Key parameters include a gate charge of 58 nC and input capacitance of 760 pF at 25 V, driven by a 10 V gate drive. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 66 W (Tc). Packaged in an IPAK (TO-251AA) configuration, this MOSFET is suitable for applications in industrial automation and power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 25 V |
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