IRFU5305
MOSFET P-CH 55V 31A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel Power MOSFET, IRFU5305. This device features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 31A at 25°C. The Rds(on) is specified at a maximum of 65mOhm at 16A and 10V Vgs, with a typical gate charge (Qg) of 63nC at 10V. Designed with a P-Channel MOSFET technology, it offers a maximum power dissipation of 110W (Tc). The IRFU5305 is housed in an IPAK (TO-251AA) through-hole package with short leads, suitable for applications operating between -55°C and 175°C. This component is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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