IRFU4510PBF
MOSFET N-CH 100V 56A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU4510PBF is a N-Channel power MOSFET with a Drain-to-Source Voltage (Vdss) of 100V. This component offers a continuous drain current (Id) of 56A at 25°C and a maximum power dissipation of 143W. Its low on-resistance is specified at 13.9mOhm at 38A and 10V Vgs. Key parameters include a gate charge (Qg) of 81 nC at 10V and input capacitance (Ciss) of 3031 pF at 50V. The device features a through-hole mounting type with the IPAK (TO-251AA) package. Operating temperature ranges from -55°C to 175°C. This MOSFET is suitable for applications in industrial and automotive power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3031 pF @ 50 V |
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