IRFU4105Z
MOSFET N-CH 55V 30A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® series IRFU4105Z is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 30A at 25°C (Tc). The Rds(On) is specified at a maximum of 24.5mOhm at 18A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 27 nC maximum at 10V and an Input Capacitance (Ciss) of 740 pF maximum at 25V. The device offers a maximum power dissipation of 48W (Tc) and operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in an IPAK (TO-251AA) with short leads, it is suitable for through-hole mounting. This MOSFET is commonly utilized in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 24.5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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