IRFU4105PBF
MOSFET N-CH 55V 27A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU4105PBF is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 55V. This component features a continuous drain current (Id) of 27A at 25°C and a maximum power dissipation of 68W (Tc). The Rds On is specified at a maximum of 45mOhm at 16A and 10V gate drive. It offers a gate charge (Qg) of 34 nC at 10V and an input capacitance (Ciss) of 700 pF at 25V. The device is housed in an IPAK (TO-251AA) package for through-hole mounting. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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