IRFU3910
MOSFET N-CH 100V 16A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3910 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a 100 V drain-source breakdown voltage and a continuous drain current rating of 16 A at 25°C (Tc), with a maximum power dissipation of 79 W (Tc). The on-resistance (Rds On) is specified at a maximum of 115 mOhm at 10 A and 10 V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 44 nC (max) at 10 V and input capacitance (Ciss) of 640 pF (max) at 25 V. The IRFU3910 utilizes Metal Oxide technology and is housed in an IPAK (TO-251AA) through-hole package with short leads, suitable for mounting in various electronic assemblies. Operating temperature range is -55°C to 175°C (TJ). This device finds application in power switching and control circuits across industries such as industrial automation and power supplies.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 25 V |
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